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Freescale Semiconductor Technical Data
Document Number: MRF7S18125AH Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz. Power Gain -- 17 dB Drain Efficiency -- 55% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1805 - 1880 MHz). Power Gain -- 17 dB Drain Efficiency -- 38% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM -- 1.75% rms * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW Output Power * Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S18125AHR3 MRF7S18125AHSR3
1805- 1880 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125AHR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125AHSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 125 W CW Case Temperature 80C, 71 W CW Symbol RJC Value (2,3) 0.31 0.34 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S18125AHR3 MRF7S18125AHSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.16 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDD = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss -- -- -- 1.15 675 312 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 1.9 2.7 5.3 0.2 2.7 -- 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1880 MHz Gps D IRL 15.5 51 -- 17 55 - 12 18.5 -- -6 dB % dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S18125AHR3 MRF7S18125AHSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point IMD Symmetry @ 125 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 75 MHz Bandwidth @ Pout = 125 W CW Average Deviation from Linear Phase in 75 MHz Bandwidth @ Pout = 125 W CW Average Group Delay @ Pout = 125 W CW, f = 1840 MHz Part - to - Part Insertion Phase Variation @ Pout = 125 W CW, f = 1840 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 140 8 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1805 - 1880 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
35 0.8 0.49 1.21 8.66 0.016 0.01
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W Avg., 1805 - 1880 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 38 1.75 - 63 - 75 -- -- -- -- -- dB % % rms dBc dBc
MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z12 VSUPPLY + R2 C1 C8 Z11 C9 C2 C3 C6
R3 RF INPUT
Z6 Z7 Z8 C13 C14 Z9 C10 C15 Z13 Z10 RF OUTPUT
Z1 C7
Z2
Z3
Z4
Z5
DUT C12
C11
C4
C5
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.227 x 0.083 Microstrip 1.180 x 0.083 Microstrip 0.135 x 0.083 Microstrip 0.568 x 1.000 Microstrip 0.092 x 1.000 Microstrip 0.095 x 1.000 Microstrip 0.565 x 1.000 Microstrip
Z8 Z9 Z10 Z11 Z12, Z13 PCB
0.200 x 0.083 Microstrip 1.116 x 0.083 Microstrip 0.227 x 0.083 Microstrip 1.175 x 0.080 Microstrip 0.760 x 0.080 Microstrip Taconic TLX - 8 RF35, 0.031, r = 2.55
Figure 1. MRF7S18125AHR3(HSR3) Test Circuit Schematic
Table 5. MRF7S18125AHR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2, C3, C4, C5 C6 C7, C8, C9, C10, C11 C12, C13, C14 C15 R1, R2 R3 Description 1 F, 50 V Chip Capacitor 4.7 F, 50 V Chip Capacitors 220 F, 63 V Electrolytic Chip Capacitor 8.2 pF Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitor 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number C3216X5R1H105K C4532X5R1H475M 2222 136 68221 ATC100B8R2BT500XT ATC100B0R2BT500XT ATC100B0R5BT500XT CRCW12061001FKEA CRCW120610R0FKEA Manufacturer TDK TDK Vishay ATC ATC ATC Vishay Vishay
MRF7S18125AHR3 MRF7S18125AHSR3 4 RF Device Data Freescale Semiconductor
VDD R1 VGS R2 C1 C8 C9 C2 C3
R3 C13 C14
C6
C10 C15 C7 C12 CUT OUT AREA
C11
C4
C5
MRF7S18125AH Rev. 0
Figure 2. MRF7S18125AHR3(HSR3) Test Circuit Component Layout
MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
18 17.5 Gps, POWER GAIN (dB) 17 16.5 16 15.5 IRL 15 1810 1820 1830 1840 1850 1860 1870 f, FREQUENCY (MHz) 53 1880 -19 D VDD = 28 Vdc Pout = 125 W CW, IDQ = 1100 mA Gps 59 58 D, DRAIN EFFICIENCY (%) 57 56 55 54 -7 -9 -11 -13 -15 -17
Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 125 Watts CW
17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 EVM 14.5 1810 1820 1830 1840 1850 1860 1870 f, FREQUENCY (MHz) 0 1880 IRL Gps D 60 D, DRAIN EFFICIENCY (%) 50 40 VDD = 28 Vdc, Pout = 57 W Avg. IDQ = 1100 mA, EDGE Modulation 30 20 10 -7 -9 -11 -13 -15 -17 -19
IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 10
Figure 4. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 57 Watts Avg.
18 IDQ = 1650 mA 17 Gps, POWER GAIN (dB) 825 mA 550 mA 15 1100 mA 1375 mA IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 0.1 1 100 TWO-TONE SPACING (MHz) IM5-L IM3-L IM3-U VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 1100 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz
16
14
VDD = 28 Vdc f = 1840 MHz
IM5-U IM7-L IM7-U
13 10 100 Pout, OUTPUT POWER (WATTS) CW 300
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing
MRF7S18125AHR3 MRF7S18125AHSR3 6 RF Device Data Freescale Semiconductor
EVM, ERROR VECTOR MAGNITUDE (% rms)
TYPICAL CHARACTERISTICS
60 59 Pout, OUTPUT POWER (dBc) 58 57 56 55 P1dB = 51.60 dBm 54 (144.6 W) 53 52 51 50 34 35 36 37 VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 12 sec(on), 1% Duty Cycle, f = 1840 MHz 38 39 40 41 42 43 44 Actual 18 P6dB = 52.74 dBm (187.8 W) Ideal Gps, POWER GAIN (dB) P3dB = 52.25 dBm (167.9 W) 17.5 17 16.5 16 15.5 15 14.5 14 13.5 13 12.5 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 1100 mA f = 1840 MHz Gps 25_C 85_C TC = -30_C -30_C 25_C 85_C 70 65 55 50 45 40 35 30 25 20 15 300 D, DRAIN EFFICIENCY (%) 1880 200 60
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus Input Power
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) 5 EVM, ERROR VECTOR MAGNITUDE (% rms)
Figure 8. Power Gain and Drain Efficiency versus Output Power
-50 Pout = 78 W Avg. -55 SR @ 400 kHz -60 43 W Avg. -65 15 W Avg. -70 -75 -80 1810 1820 1830 1840 SR @ 600 kHz 43 W Avg. 1850 1860 1870 78 W Avg. 15 W Avg. VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation
4 Pout = 78 W Avg. 3 VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation
2 43 W Avg. 1 15 W Avg. 0 1810 1820 1830 1840 1850 1860 1870 1880 f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 9. EVM versus Frequency
-35 SPECTRAL REGROWTH @ 400 kHz (dBc) -40 -45 -50 -55 -60 -65 -70 -75 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) TC = -30_C VDD = 28 Vdc IDQ = 1100 mA f = 1840 MHz EDGE Modulation 85_C 25_C SPECTRAL REGROWTH @ 600 kHz (dBc) -45
Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
25_C -50 -55 -60 -65 -70 -75 -80 -85 0 20 40 60 80 100 120 140 160 180 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 1100 mA f = 1840 MHz, EDGE Modulation 85_C TC = -30_C
Figure 11. Spectral Regrowth at 400 kHz versus Output Power
Figure 12. Spectral Regrowth at 600 kHz versus Output Power
MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
EVM, ERROR VECTOR MAGNITUDE (% rms) 24 20 16 12 D 8 85_C 4 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. TC = 25_C 10 0 500 EVM 20 VDD = 28 Vdc, IDQ = 1100 mA f = 1840 MHz, EDGE Modulation -30_C 85_C -30_C 60 25_C 50 D, DRAIN EFFICIENCY (%) 40 30 Gps, POWER GAIN (dB) 18 TC = -30_C 19
17 25_C 16 85_C 15 VDD = 28 Vdc Pout = 125 W CW IDQ = 1100 mA 1810 1820 1830 1840 1850 1860 1870 1880
14 f, FREQUENCY (MHz)
Figure 13. EVM and Drain Efficiency versus Output Power
109
Figure 14. Power Gain versus Frequency
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 125 W CW, and D = 55%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 15. MTTF versus Junction Temperature
MRF7S18125AHR3 MRF7S18125AHSR3 8 RF Device Data Freescale Semiconductor
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 16. EDGE Spectrum
MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 9
Zo = 5
f = 1920 MHz Zload f = 1920 MHz f = 1760 MHz Zsource f = 1760 MHz
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW f MHz 1760 1780 1800 1820 1840 1860 1880 1900 1920 Zsource W 1.30 - j3.17 1.27 - j3.05 1.24 - j2.92 1.21 - j2.80 1.18 - j2.66 1.15 - j2.52 1.12 - j2.37 1.09 - j2.21 1.05 - j2.06 Zload W 1.44 - j2.62 1.41 - j2.47 1.39 - j2.32 1.37 - j2.17 1.34 - j2.02 1.31 - j1.88 1.29 - j1.73 1.26 - j1.58 1.23 - j1.44
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance MRF7S18125AHR3 MRF7S18125AHSR3 10 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 49 30 31 32 33 P1dB = 52.105 dBm (162.4 W) Actual P6dB = 53.68 dBm (233.3 W) P3dB = 53.07 dBm (202.7 W)
Ideal
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f =1840 MHz 34 35 36 37 38 39 40 41 42
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 0.60 - j2.81 Zload 1.05 - j2.36
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V
MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S18125AHR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF7S18125AHSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF7S18125AHR3 MRF7S18125AHSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2008 * Initial Release of Data Sheet Description
MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 13
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MRF7S18125AHR3 MRF7S18125AHSR3
Rev. 14 0, 11/2008 Document Number: MRF7S18125AH
RF Device Data Freescale Semiconductor

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